Title :
Sub-5 nm multiple-thickness gate oxide technology using oxygen implantation
Author :
Ya-Chin King ; Kuo, C. ; Tsu-Jae King ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A novel and simple method of growing oxides of multiple thicknesses using oxygen implant in sub-5 nm gate oxide technologies is presented. Results show that multiple thicknesses on the same wafer can be achieved with good interface and bulk properties of the oxide. Oxygen implant produces oxides with better Q/sub BD/ characteristics than the nitrogen-implanted oxides.
Keywords :
CMOS integrated circuits; carrier mobility; dielectric thin films; integrated circuit reliability; integrated circuit technology; ion implantation; semiconductor device breakdown; 5 nm; CMOS technology; O; O implantation; SiO/sub 2/-Si; breakdown characteristics; multiple-thickness gate oxide technology; Annealing; Current measurement; Frequency measurement; Implants; Logic circuits; Nitrogen; Oxidation; Oxygen; Thickness measurement; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746426
