Title :
Radical oxygen (O/sup */) process for highly-reliable SiO/sub 2/ with higher film-density and smoother SiO/sub 2//Si interface
Author :
Nagamine, M. ; Itoh, H. ; Satake, H. ; Toriumi, A.
Author_Institution :
Adv. Semicond. Devices Res. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
It has been clarified that the radical oxidation with the oxygen remote plasma improves the electrical reliability of the SiO/sub 2/ films, compared with the dry oxidation. By TEM observation and X-ray-scattering-reflectivity spectroscopy it was demonstrated that, in the radical oxides, planarization of the SiO/sub 2//Si[100] interface and densification of the SiO/sub 2/ films due to repairing of the SiO/sub 2/ network were realized, compared with those in the dry oxides. Moreover, it was also found that the radical oxidation can realize a reliable SiO/sub 2/ in the lower oxidation temperatures even down to 700/spl deg/C.
Keywords :
CMOS integrated circuits; X-ray spectroscopy; densification; dielectric thin films; integrated circuit reliability; integrated circuit technology; oxidation; semiconductor device breakdown; semiconductor-insulator boundaries; silicon compounds; surface treatment; transmission electron microscopy; 700 C; O; SiO/sub 2/ film densification; SiO/sub 2/-Si; SiO/sub 2//Si[100] interface planarization; TEM observation; X-ray-scattering-reflectivity spectroscopy; dielectric breakdown; electrical reliability; film density; highly-reliable SiO/sub 2/; oxidation temperature; oxygen remote plasma; radical O process; radical oxidation; smoother SiO/sub 2//Si interface; Atomic measurements; Degradation; Dielectric breakdown; Electric variables; Furnaces; Oxidation; Oxygen; Plasma temperature; Semiconductor films; Silicon;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746428
