DocumentCode
2574251
Title
Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics
Author
Ogata, T. ; Inoue, M. ; Nakamura, T. ; Tsuji, N. ; Kobayashi, K. ; Kawase, K. ; Kurokawa, H. ; Kaneoka, T. ; Ohno, Y. ; Miyoshi, H.
Author_Institution
ULSI Dev. Center, Mitsubishi Electr. Corp., Itami, Japan
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
597
Lastpage
600
Abstract
We have statistically analyzed 28800 cells of arrayed stacked gate transistors, and, for the first time, we discuss the effectiveness of NO and N/sub 2/O nitridation in suppressing microscopic SILC (mSILC). We have found that NO nitridation is more effective in suppressing the mSILC than N/sub 2/O nitridation and is very promising for the reduction of bit failures.
Keywords
MOSFET; dielectric thin films; leakage currents; nitridation; tunnelling; N/sub 2/O; NO; arrayed stacked gate transistors; bit failure; microscopic SILC; nitridation; stress induced leakage current; tunnel dielectric; Charge carrier processes; Dielectric films; Dielectric measurements; Dielectric substrates; Electron traps; Gases; Leakage current; MOS capacitors; Microscopy; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746429
Filename
746429
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