Title :
High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers
Author :
Mohammadi, S. ; Park, J.W. ; Pavlidis, D. ; Dua, C. ; Guyaux, J.L. ; Garcia, J.C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A self-aligned GaInP/GaAs HBT technology was used to develop a monolithic high-gain transimpedance amplifier suitable for optical communication receivers. On-wafer probe measurements revealed a gain (S/sub 21/) of 18.8 dB with a bandwidth of 13.5 GHz and input/output matching better than -8 dB. The amplifier showed a sensitivity of -15 dBm for 10 Gb/s NRZ 2/sup 7/-1 pseudo-random bit sequence with a BER of 10/sup -9/ The noise figure of the amplifier was better than 7.5 dB over the bandwidth of operation.
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit noise; integrated circuit technology; optical receivers; wideband amplifiers; 10 Gbit/s; 13.5 GHz; 18.8 dB; 7.5 dB; GaInP-GaAs; HBT monolithic transimpedance amplifier; high-gain amplifier; high-speed optoelectronic receivers; input/output matching; onwafer probe measurements; optical communication receivers; self-aligned HBT technology; Bandwidth; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Operational amplifiers; Optical amplifiers; Optical fiber communication; Optical receivers; Probes; Semiconductor optical amplifiers;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746443
