Title :
Broadly-tunable narrow-linewidth micromachined laser/photodetector and phototransistor
Author :
Sugihwo, F. ; Lin, C.-C. ; Eyres, L.A. ; Fejer, M.M. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
The key limitation to dense wavelength division multiplexing (WDM) systems is the receiving end since laser linewidths are typically less than 1 /spl Aring/. By reverse biasing the p-i-n diode region, we demonstrated dual functionality of wavelength-tunable vertical-cavity surface-emitting lasers (VCSELs) as wavelength-tunable resonant cavity photodetectors (RCPs) with linewidths less than 2.5 nm. Additionally, we have fabricated wavelength-tunable resonant cavity phototransistors (RCPTs) with linewidths as narrow as 1.7 nm. Wavelength-tunable RCPTs are capable of high quantum efficiency, narrow linewidth, and high-speed operation, making them ideal devices for WDM receivers.
Keywords :
laser cavity resonators; optical fibre communication; optical receivers; p-i-n diodes; photodetectors; phototransistors; surface emitting lasers; wavelength division multiplexing; WDM systems; dual functionality; high-speed operation; laser linewidths; narrow linewidth; p-i-n diode region; quantum efficiency; reverse biasing; wavelength-tunable resonant cavity photodetectors; wavelength-tunable resonant cavity phototransistors; wavelength-tunable vertical-cavity surface-emitting lasers; Fiber lasers; Laser modes; Masers; P-i-n diodes; Photodetectors; Phototransistors; Resonance; Surface emitting lasers; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746444