A lateral insulated gate bipolar transistor employing the self-align sidewall implanted n/sup +/ source

Author

Byeon, D.S. ; Lee, B.H. ; Kim, D.Y. ; Han, M.K. ; Coi, Y.I. ; Yun, C.M.

Author_Institution

Dept. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

687

Lastpage

690

Abstract

We report a new LIGBT employing the self-align sidewall implanted n/sup +/ source, entitled SI-LIGBT, in order to increase the latch-up capability. In the proposed SI-LIGBT, the tiny n/sup +/ source is formed by the self-aligned phosphorus ion implantation through the sidewall of trench and the p/sup ++/ body is extended underneath the n/sup +/ source so that the latch-up current is increased considerably due to the absence of the resistance of p-body. The latch-up current of the fabricated SI-LIGBT is about 1550 A/cm/sup 2/ which is much higher when compared with that of the conventional LIGBT. At high temperature (125/spl deg/C), the latch-up current of the SI-LIGBT is larger than 1000 A/cm/sup 2/ despite the degraded latch-up capability.

Keywords

insulated gate bipolar transistors; ion implantation; 125 C; SI-LIGBT; Si:P; high temperature operation; latch-up current; lateral insulated gate bipolar transistor; phosphorus ion implantation; self-align sidewall implanted n/sup +/ source; Degradation; Fabrication; Immune system; Insulated gate bipolar transistors; Ion implantation; Power integrated circuits; Switching circuits; Temperature; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746449

Filename

746449