A lateral insulated gate bipolar transistor employing the self-align sidewall implanted n/sup +/ source

We report a new LIGBT employing the self-align sidewall implanted n/sup +/ source, entitled SI-LIGBT, in order to increase the latch-up capability. In the proposed SI-LIGBT, the tiny n/sup +/ source is formed by the self-aligned phosphorus ion implantation through the sidewall of trench and the p/sup ++/ body is extended underneath the n/sup +/ source so that the latch-up current is increased considerably due to the absence of the resistance of p-body. The latch-up current of the fabricated SI-LIGBT is about 1550 A/cm/sup 2/ which is much higher when compared with that of the conventional LIGBT. At high temperature (125/spl deg/C), the latch-up current of the SI-LIGBT is larger than 1000 A/cm/sup 2/ despite the degraded latch-up capability.