Title :
SiGe fast-switching power diodes
Author :
Brown, A.R. ; Hurkx, G.A.M. ; Huizing, H.G.A. ; Peter, M.S. ; de Boer, W.B. ; van Berkum, J.G.M. ; Zalm, P.C. ; Huang, E. ; Koper, N.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
SiGe is widely used in high-frequency bipolar transistors because of its low bandgap and compatibility with silicon. Here we exploit the same benefits of SiGe in a new application area, namely ultrafast power rectifiers. We have produced discrete p/sup +/(SiGe)-n/sup -/n/sup ++/ diodes with low forward voltage drop, low stored charge, and a soft recovery. The performance far exceeds that of conventional devices. These improvements are achieved without resorting to lifetime killing and thus the devices can be easily integrated into power ICs.
Keywords :
power semiconductor diodes; semiconductor materials; silicon compounds; solid-state rectifiers; SiGe; bandgap; fast-switching power diodes; forward voltage drop; power ICs; soft recovery; stored charge; ultrafast power rectifiers; Charge measurement; Current measurement; Germanium silicon alloys; Leakage current; Low voltage; Power integrated circuits; Schottky diodes; Semiconductor diodes; Silicon germanium; Solid modeling;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746453
