Validation of two-dimensional implant and diffusion profiles using novel scanning capacitance microscope sample preparation and deconvolution techniques

We present two new sample preparation techniques for scanning capacitance microscope (SCM) measurements. These techniques can produce high quality, low noise, raw SCM data of the cross-sectional source/drain and of the surface channel profile in a real MOS device structure. The raw SCM data is converted to carrier concentration using a database-driven deconvolution technique which accounts for both the average concentration and the concentration gradient at each pixel imaged. Our experimental results directly validate complex models for the ion implant profile and for the profile evolution during transient enhanced diffusion (TED), and demonstrate the inadequacy of standard models.