Characterization of arsenic dose loss at the Si/SiO/sub 2/ interface using high resolution X-ray photoelectron spectrometry

Author

Kasnavi, R. ; Pianetta, P. ; Yun Sun ; Renee Mo ; Griffin, P.B. ; Plummer, J.D.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

721

Lastpage

724

Abstract

Using high resolution X-ray Photoelectron Spectrometry (XPS) for micro-profiling, we have directly observed the pile-up of arsenic on the silicon side of the oxide-silicon interface. We believe it contains most of the arsenic dose loss that happens during transient enhanced diffusion (TED). This new result is crucial to correctly model the dose loss and suggests a reason for the fact that the arsenic surface concentration remains constant during an anneal and that the dose loss is partially reversible.

Keywords

X-ray photoelectron spectra; annealing; arsenic; diffusion; doping profiles; elemental semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; Si:As-SiO/sub 2/; X-ray photoelectron spectrometry; annealing; arsenic dose loss; dopant micro-profiling; oxide-silicon interface; pile-up; surface concentration; transient enhanced diffusion; Annealing; Hafnium; Laboratories; Predictive models; Semiconductor process modeling; Silicon; Solids; Sputter etching; Sputtering; Synchrotron radiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746458

Filename

746458