An integrated approach for accurate simulation and modeling of the silicide-source/drain structure and the silicide-diffusion contact resistance

We present the first integrated simulation and modeling approach for the silicide-source/drain structure, and for the silicide-diffusion contact resistance; thus, providing the critical link between electrical performance and the processing/structural variables forming the silicide source/drain region. We apply this approach to predict the silicide-diffusion contact resistance accurately, and to improve transistor performance significantly.