A manufacturable integration technology of sputter-BST capacitor with a newly proposed thick Pt electrode

Author

Tsunemine, Y. ; Okudaira, T. ; Kashihara, K. ; Hanafusa, K. ; Yutani, A. ; Fujita, Y. ; Matsushita, M. ; Itoh, H. ; Miyoshi, H.

Author_Institution

ULSI Process Dev. Dept., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

811

Lastpage

814

Abstract

A novel process technology to realize a thick Pt bottom electrode is developed, particularly for facilitating the use of sputter-BST capacitors. The sputter-BST capacitor fabricated with this technology gives a production-worthy yield and maintains initial electrical properties after finishing the back-end process, including the Al wiring and the plasma SiN-passivation. By using this technology, it is feasible to obtain a reliable BST capacitor in the 0.16 /spl mu/m-geometry, with the achievement of BST´s Teq, SiO/sub 2/-equivalent thickness, of 0.40 nm and a 300 nm-high bottom electrode.

Keywords

barium compounds; capacitors; electrodes; platinum; sputtered coatings; strontium compounds; 0.16 micron; Al wiring; BaSrTiO/sub 3/; Pt; Pt bottom electrode; back-end process; electrical properties; equivalent oxide thickness; manufacturable integration technology; plasma SiN passivation; sputter BST capacitor; yield; Binary search trees; Capacitors; Electrodes; Etching; Manufacturing; Passivation; Plasma properties; Random access memory; Sputtering; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746479

Filename

746479