DocumentCode
2575165
Title
Sputtering process design of PZT capacitors for stable FeRAM operation
Author
Inoue, N. ; Takeuchi, T. ; Hayashi, Y.
Author_Institution
ULSI Res. Lab., NEC Corp., Sagamihara, Japan
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
819
Lastpage
822
Abstract
PZT capacitors of Zr/Ti=0.35/0.65 show wide operational margin in FeRAM devices, due to the low coercive voltage and the low dielectric constant. The sputtering of top electrodes, Ir/IrO/sub 2/, in high O/sub 2/ pressure and at low temperature avoids damage to the PZT surface. Optimization of the composition and sputtering conditions for the top electrodes achieved a highly reliable capacitor for FeRAM.
Keywords
ferroelectric capacitors; ferroelectric storage; lead compounds; permittivity; random-access storage; sputter deposition; zirconium compounds; FeRAM operation; PZT; PZT capacitors; PbZrO3TiO3; coercive voltage; dielectric constant; operational margin; reliable capacitor; sputtering conditions; sputtering process design; top electrodes; Capacitors; Dielectric constant; Electrodes; Ferroelectric films; Low voltage; Nonvolatile memory; Process design; Random access memory; Sputtering; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746481
Filename
746481
Link To Document