Title :
Advanced dielectrics for gate oxide, DRAM and RF capacitors
Author :
van Dover, R.B. ; Fleming, R.M. ; Schneemeyer, L.F. ; Alers, G.B. ; Werder, D.J.
Author_Institution :
Lucent Technol., Murray Hill, NJ, USA
Abstract :
A new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both tantalum oxide and titanium oxide will be discussed with dielectric constants as high as 62 and leakage currents of less than 10/sup -8/ A/cm/sup 2/ at 1 MV/cm.
Keywords :
DRAM chips; aluminium alloys; capacitors; dielectric thin films; leakage currents; permittivity; tantalum alloys; tin alloys; titanium alloys; zirconium alloys; DRAM; RF capacitors; TaAlO; ZrSnTiO; amorphous metal oxides; dielectric constant; gate oxide; leakage currents; low temperature processing; Amorphous materials; Capacitors; Dielectric materials; Electrodes; High-K gate dielectrics; Inorganic materials; Radio frequency; Random access memory; Temperature; Tin;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746482
