Title :
RC delay reduction of 0.18 /spl mu/m CMOS technology using low dielectric constant fluorinated amorphous carbon
Author :
Matsubara, Y. ; Kishimoto, K. ; Endo, K. ; Iguchi, M. ; Tatsumi, T. ; Gomi, H. ; Horiuchi, T. ; Tzou, E. ; Xi, M. ; Cheng, L.Y. ; Tribula, D. ; Moghadam, F.
Author_Institution :
NEC Corp., Sagamihara, Japan
Abstract :
A low-k fluorinated amorphous carbon (a-C:F: dielectric constant 2.5) film as inter-metal dielectric (IMD) has been successfully integrated in 0.18-/spl mu/m CMOS technology. The RC delay of a ring oscillator with loaded wiring (length: 10 mm) is reduced by 22% using an a-C:F IMD compared with that using a SiO/sub 2/ IMD. The thermal stability problems from integrating a-C:F IMD with a W plug (deposition temperature: 370/spl deg/C; film stress: 1.5/spl times/10/sup 10/ dyne/cm/sup 2/) can be overcome by using post a-C:F deposition anneal. This leads to less a-C:F outgassing at temperatures up to 375/spl deg/C.
Keywords :
CMOS digital integrated circuits; amorphous state; carbon; delays; dielectric thin films; fluorine; integrated circuit design; integrated circuit metallisation; permittivity; thermal stability; wiring; 0.18 micron; 370 degC; C:F; CMOS technology; RC delay reduction; deposition temperature; dielectric constant; film stress; inter-metal dielectric; loaded wiring; outgassing; ring oscillator; thermal stability problems; Amorphous materials; CMOS technology; Delay; Dielectric constant; Dielectric films; Ring oscillators; Temperature; Thermal stability; Thermal stresses; Wiring;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746486
