• DocumentCode
    2575301
  • Title

    Microwave characteristics of GaAs MMIC integrable optical detectors

  • Author

    Claspy, P.C. ; Hill, S.M. ; Bhasin, K.B.

  • Author_Institution
    NASA Lewis Res. Center, Cleveland, OH, USA
  • fYear
    1989
  • fDate
    13-15 June 1989
  • Firstpage
    1163
  • Abstract
    The high-frequency characteristics of interdigitated photoconductive detectors fabricated on a HEMT (high-electron-mobility transistor) structure are presented. The fabrication process was completely compatible with that used to fabricate MODFETs (modulation-doped FETs), making these detectors easily integrable for MMIC (monolithic microwave integrated circuit) usage. The operating wavelength chosen was 820 nm. Detector responsivity as high as 2.5 A/W and an external quantum efficiency of 3.81% were measured. Response speed was nearly independent of electrode geometry, and all detectors had usable response at frequencies to 6 GHz. A change from inductive to capacitive reactance with bias suggests the possibility of a zero-reactance operating point. A small-signal model of the detector based on microwave measurements is also developed.<>
  • Keywords
    III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; integrated optoelectronics; optical interconnections; photoconducting devices; photodetectors; 3.81 percent; 6 GHz; 820 nm; GaAs; HEMT structure; HF interconnects; III-V semiconductors; MMIC; MODFETs; external quantum efficiency; fabrication process; high-electron-mobility transistor; high-frequency characteristics; integrable optical detectors; integrated optoelectronics; interdigitated photoconductive detectors; modulation-doped FETs; monolithic microwave integrated circuit; small-signal model; zero-reactance operating point; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MMICs; MODFET circuits; MODFET integrated circuits; Optical detectors; Optical device fabrication; Photoconductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1989., IEEE MTT-S International
  • Conference_Location
    Long Beach, CA, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1989.38930
  • Filename
    38930