Title :
Thermal, self-heating and kink effects in a-Si:H thin film transistors
Author :
Iniguez, B. ; Wang, L. ; Fjeldly, T.A. ; Shur, M.S. ; Slade, H.
Author_Institution :
ECSE, Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We report on self-heating, thermal and kink effects in a-Si TFTs. These effects become crucial for gate lengths of 4 microns and shorter. Our data show that self-heating effects in TFTs might reduce the highest operating temperature for AMLC displays by up to 30 to 40/spl deg/C for a 4 /spl mu/m gate device and even more for shorter devices.
Keywords :
amorphous semiconductors; driver circuits; elemental semiconductors; equivalent circuits; heat losses; hydrogen; liquid crystal displays; semiconductor device models; silicon; thin film transistors; tunnelling; 4 micron; AMLCD; DC characteristics; Si:H; a-Si:H TFT; equivalent thermal circuit; floating body effect; kink effects; operating temperature; self-heating effects; short channel effects; thermal effects; tunnelling; unified charge model concept; Analytical models; Circuits; Glass; Heat transfer; MOSFETs; Temperature dependence; Temperature sensors; Thermal conductivity; Thin film transistors; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746495
