Title :
The origin of secondary electron gate current: a multiple-stage Monte Carlo study for scaled, low-power flash memory
Author :
Kencke, D.L. ; Wang, X. ; Wang, H. ; Ouyang, Q. ; Jallepalli, S. ; Rashed, M. ; Maziar, C. ; Tasch, A., Jr. ; Banerjee, S.K.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
A multiple-stage simulation procedure identifies, for the first time, the location of secondary electrons that very efficiently produce gate currents in flash EEPROMs. The simulation method incorporates both electron and hole Monte Carlo analysis to calculate this secondary electron gate current without introducing additional fitting parameters. (I/sub g//I/sub d/) continues to increase for smaller channel length (50/spl times/ from L/sub g/-03.39 to 0.12 /spl mu/m) and higher substrate doping (more than 6/spl times/ when doubled) in scaled, low-power flash memory.
Keywords :
Monte Carlo methods; circuit simulation; flash memories; integrated circuit modelling; low-power electronics; semiconductor doping; 0.12 to 0.39 micron; channel length; low-power flash memory; multiple-stage Monte Carlo study; secondary electron gate current; simulation procedure; substrate doping; Charge carrier processes; Discrete event simulation; Doping; EPROM; Electrons; Flash memory; Impact ionization; Microelectronics; Monte Carlo methods; Probability distribution;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746497
