A new model of tunnelling current and SILC in ultra-thin oxides

Author

Larcher, L. ; Paccagnella, A. ; Scarpa, A. ; Ghidini, G.

Author_Institution

Dipt. di Elettronica e Inf., Padova Univ., Italy

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

901

Lastpage

904

Abstract

We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitatively predict the gate current across ultra-thin oxides. Simulations nicely fit the experimental quantum oscillations of the gate current in the Fowler-Nordheim tunnelling regime. The oscillation period of the gate current has been empirically correlated with the oxide thickness. The low-field stress induced leakage current can be fitted by our model as well, by inserting oxide traps mediating an inelastic trap-assisted tunnelling.

Keywords

CMOS integrated circuits; MOS capacitors; insulating thin films; integrated circuit modelling; integrated circuit reliability; leakage currents; semiconductor device models; tunnelling; Fowler-Nordheim tunnelling regime; MOS devices; SILC; double-box model; gate current; inelastic trap-assisted tunnelling; oscillation period; oxide conduction band; oxide traps; quantum oscillations; stress induced leakage current; tunnelling current; ultra-thin oxides; CMOS technology; Cathodes; Electrons; Leakage current; MOS devices; Microelectronics; Predictive models; Semiconductor device modeling; Stress; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746500

Filename

746500