Title :
Transistor matching in analog CMOS applications
Author :
Pelgrom, M.J.M. ; Tuinhout, H.P. ; Vertregt, M.
Author_Institution :
Phillips Res. Labs., Eindhoven, Netherlands
Abstract :
This paper gives an overview of MOSFET mismatch effects that form a performance/yield limitation for many designs. After a general description of (mis)matching, a comparison over past and future process generations is presented. The application of the matching model in CAD and analog circuit design is discussed. Mismatch effects gain importance as critical dimensions and CMOS power supply voltages decrease.
Keywords :
CMOS analogue integrated circuits; MOSFET; circuit CAD; integrated circuit design; CAD; CMOS analog circuit; MOSFET mismatch; design; transistor matching; Analog circuits; Analog-digital conversion; Clocks; Design automation; Doping; Laboratories; MOSFET circuits; Multiplexing; Neodymium; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746503
