Title :
A novel high-frequency quasi-SOI power MOSFET for multi-gigahertz applications
Author :
Matsumoto, S. ; Ishiyama, T. ; Hiraoka, Y. ; Sakai, T. ; Yachi, T. ; Kamitsuna, H. ; Muraguchi, M.
Author_Institution :
NTT Integrated Inf. & Energy Syst. Labs., Tokyo, Japan
Abstract :
We have fabricated a high-efficiency quasi-SOI power MOSFET for multi-gigahertz applications. The device was formed by reversed silicon wafer direct bonding which enables easy use of a high-resistivity substrate. The breakdown voltage of the quasi-SOI power MOSFET is more than twice that of a conventional SOI power MOSFET. Fmax of the quasi-SOI power MOSFET is 11.0 GHz, about 15% higher than that of the SOI power MOSFET. The fabricated device has the excellent power added efficiency of 68% at a 2 GHz under 3.6 V operation.
Keywords :
microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device breakdown; silicon-on-insulator; wafer bonding; 11.0 GHz; 3.6 V; 68 percent; breakdown voltage; high-frequency quasi-SOI power MOSFET; high-resistivity substrate; microwave FETs; multi-gigahertz applications; power added efficiency; reversed wafer direct bonding; Electrodes; Integrated circuit technology; Laboratories; MMICs; MOSFET circuits; Power MOSFET; Radio frequency; Silicon; Substrates; Wafer bonding;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746510
