DocumentCode
2575657
Title
A 31 GHz f/sub max/ lateral BJT on SOI using self-aligned external base formation technology
Author
Shino, T. ; Inoh, K. ; Yamada, T. ; Nii, H. ; Kawanaka, S. ; Fuse, T. ; Yoshimi, M. ; Katsumata, Y. ; Watanabe, S. ; Matsunaga, J.
Author_Institution
Adv. Semicond. Devices Res. Labs., Toshiba Corp., Kawasaki, Japan
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
953
Lastpage
956
Abstract
A novel device structure and simple process technology for realizing low-power/high-performance SOI lateral BJTs are presented. Low base resistance has been achieved by employing a self-aligned external base formation process. Due to reduced parasitics, the fabricated device exhibited an f/sub max/ of 31 GHz, the highest value for an SOI BJT reported so far.
Keywords
UHF bipolar transistors; diffusion; microwave bipolar transistors; silicon-on-insulator; 31 GHz; SOI; base resistance; lateral BJT; parasitics; process technology; self-aligned external base formation; Boron; Etching; Frequency; Fuses; Implants; Laboratories; Noise measurement; Resists; Semiconductor devices; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746512
Filename
746512
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