Title :
Record power added efficiency of bipolar power transistors for low voltage wireless applications
Author :
van Rijs, F. ; Visser, H.A. ; Magnee, P.H.C.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
To increase the power added efficiency (PAE) of low voltage RF bipolar power transistors for cellular applications, we investigated the influence of transistor parasitics on PAE. We found that reducing the output capacitance increases the PAE due to better second harmonic tuning. By optimizing the transistor for a low output capacitance we achieved a record PAE of 71% at 0.5 Watt, 1.8 GHz and 3.5 V supply voltage.
Keywords :
UHF bipolar transistors; capacitance; cellular radio; low-power electronics; power bipolar transistors; tuning; 0.5 W; 1.8 GHz; 3.5 V; 71 percent; bipolar power transistors; cellular applications; low voltage wireless applications; output capacitance; power added efficiency; second harmonic tuning; transistor parasitics; Bipolar transistors; Breakdown voltage; Electrical resistance measurement; Low voltage; Parasitic capacitance; Power amplifiers; Power generation; Power measurement; Power transistors; Solid modeling;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746513
