An effective gate resistance model for CMOS RF and noise modeling

Author

Xiaodong Jin ; Jia-Jiunn Ou ; Chih-Hung Chen ; Weidong Liu ; Deen, M.J. ; Gray, P.R. ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

961

Lastpage

964

Abstract

A physics-based effective gate resistance model representing the non-quasi-static (NQS) effect and the distributed gate electrode resistance is proposed for accurately predicting the RF performance of CMOS devices. The accuracy of the model is validated with 2D simulations and experimental data. In addition, the effect of the gate resistance on the device noise behavior has been studied with measured data. The result shows that an accurate gate resistance model is essential for the noise modeling.

Keywords

CMOS integrated circuits; UHF integrated circuits; field effect MMIC; integrated circuit modelling; integrated circuit noise; CMOS; RF applications; distributed gate electrode resistance; gate resistance model; noise behavior; noise modeling; nonquasistatic effect; CMOS technology; Circuits; Electric resistance; Electrical resistance measurement; Electrodes; Predictive models; Radio frequency; Roentgenium; Semiconductor device modeling; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746514

Filename

746514