DocumentCode
2575709
Title
Process induced damage on RFCMOS
Author
Morifuji, E. ; Ohguro, T. ; Yoshitomi, T. ; Kimijima, H. ; Morimoto, T. ; Momose, H.S. ; Katsumata, Y. ; Iwai, H.
Author_Institution
Toshiba Corp., Kawasaki, Japan
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
965
Lastpage
968
Abstract
We have investigated the correlation between process induced damage and RF analog characteristics. Vth matching, fmax, and NFmin were analyzed using mass data. It was found that the redistribution of channel profile due to the damage induced by ion implantation at the gate edge affects the spread of fmax and NFmin. This tendency was not apparent in the spread of fT.
Keywords
CMOS analogue integrated circuits; UHF integrated circuits; doping profiles; field effect MMIC; integrated circuit reliability; integrated circuit yield; ion implantation; large scale integration; CMOS; IC reliability; IC yield; LSI; RF analog characteristics; channel profile redistribution; gate edge; ion implantation; process induced damage; Boron; CMOS process; Data analysis; Etching; Implants; Ion implantation; MOSFETs; Plasma applications; Plasma immersion ion implantation; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746515
Filename
746515
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