Title :
Process induced damage on RFCMOS
Author :
Morifuji, E. ; Ohguro, T. ; Yoshitomi, T. ; Kimijima, H. ; Morimoto, T. ; Momose, H.S. ; Katsumata, Y. ; Iwai, H.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
We have investigated the correlation between process induced damage and RF analog characteristics. Vth matching, fmax, and NFmin were analyzed using mass data. It was found that the redistribution of channel profile due to the damage induced by ion implantation at the gate edge affects the spread of fmax and NFmin. This tendency was not apparent in the spread of fT.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; doping profiles; field effect MMIC; integrated circuit reliability; integrated circuit yield; ion implantation; large scale integration; CMOS; IC reliability; IC yield; LSI; RF analog characteristics; channel profile redistribution; gate edge; ion implantation; process induced damage; Boron; CMOS process; Data analysis; Etching; Implants; Ion implantation; MOSFETs; Plasma applications; Plasma immersion ion implantation; Radio frequency;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746515
