DocumentCode
2575710
Title
Mechanical Properties of Arrayed Pb-Free Tin Bump and Its Interfacial Reaction with Ni-P UBM during Reflow Process
Author
Zhu, Dapeng ; Luo, Le
Author_Institution
Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai
fYear
2006
fDate
26-29 Aug. 2006
Firstpage
1
Lastpage
4
Abstract
In this paper the array and peripheral structured pure tin solder bump with electroless Ni-P UBM (under bump metallization) as barrier layer was fabricated on 4 inch wafer. The solder uniformity at wafer level was good after reflow. The effect of different reflow temperature on solder shear strength was studied and the bump failure mode and the interfacial reaction between tin bump and Ni-P UBM layers were analyzed. The morphology and constitute of intermetallic were analyzed by optical microscope and SEM. The results show that the needle-like Ni3Sn4 intermetallic was formed at the interface between tin bump and UBM layer. The reflow temperature had little effect on bump shear strength. The failure of solder shear test was ductile fracture. With the reflow temperature and time increasing, needle-like Ni3Sn4 intermetallic began ripen and spall-off into the solder due to compressive stress. At the same time fine Ni3P intermetallic was formed between electroless Ni-P layer and Ni3Sn4 layer
Keywords
metallisation; nickel alloys; nickel compounds; phosphorus alloys; reflow soldering; reliability; scanning electron microscopy; solders; 4 in; Ni-P; Ni3P; Ni3Sn4; SEM; UBM; electroless layer; interfacial reaction; lead-free tin bump mechanical property; optical microscope; reflow process; solder bump; under bump metallization; wafer level solder uniformity; Failure analysis; Intermetallic; Mechanical factors; Metallization; Morphology; Optical microscopy; Scanning electron microscopy; Temperature; Testing; Tin; Interfacial reaction; Lead free tin solder bumping; Ni-P UBM; Reflow;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology, 2006. ICEPT '06. 7th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0619-6
Electronic_ISBN
1-4244-0620-X
Type
conf
DOI
10.1109/ICEPT.2006.359755
Filename
4198876
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