DocumentCode :
2575718
Title :
Flash memories: where we were and where we are going
Author :
Lai, S.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
fYear :
1998
fDate :
6-9 Dec. 1998
Firstpage :
971
Lastpage :
973
Abstract :
This paper examines why stacked gate ETOX/sup TM/ is the highest volume flash memory technology up to now. Looking into the future, technologies for flash memories will become more diversified. Multi-level storage technology will be prevalent and plays a dominant role in lowering bit cost. Flash memory card is emerging as a new market segment, and there is increasing demand to integrate high performance logic with flash.
Keywords :
flash memories; integrated circuit technology; memory cards; bit cost; flash memories; market segment; memory card; multi level storage technology; stacked gate ETOX; Automotive engineering; Costs; Disk drives; EPROM; Educational institutions; Electrons; Flash memory; Logic; Manufacturing processes; Nonvolatile memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-4774-9
Type :
conf
DOI :
10.1109/IEDM.1998.746516
Filename :
746516
Link To Document :
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