• DocumentCode
    2575718
  • Title

    Flash memories: where we were and where we are going

  • Author

    Lai, S.

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • fYear
    1998
  • fDate
    6-9 Dec. 1998
  • Firstpage
    971
  • Lastpage
    973
  • Abstract
    This paper examines why stacked gate ETOX/sup TM/ is the highest volume flash memory technology up to now. Looking into the future, technologies for flash memories will become more diversified. Multi-level storage technology will be prevalent and plays a dominant role in lowering bit cost. Flash memory card is emerging as a new market segment, and there is increasing demand to integrate high performance logic with flash.
  • Keywords
    flash memories; integrated circuit technology; memory cards; bit cost; flash memories; market segment; memory card; multi level storage technology; stacked gate ETOX; Automotive engineering; Costs; Disk drives; EPROM; Educational institutions; Electrons; Flash memory; Logic; Manufacturing processes; Nonvolatile memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-4774-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1998.746516
  • Filename
    746516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2575718