DocumentCode
2575813
Title
Low voltage, low current, high speed program step split gate cell with ballistic direct injection for EEPROM/flash
Author
Ogura, S. ; Hori, A. ; Kato, J. ; Yamanaka, M. ; Odanaka, S. ; Fujimoto, H. ; Akamatsu, K. ; Ogura, T. ; Kojima, M. ; Kotani, H.
Author_Institution
Halo LSI Inc., Wappingers Falls, NY, USA
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
987
Lastpage
990
Abstract
By disassociating from the conventional planar Nch FET structure, a new step split channel device with a new mechanism of ballistic channel hot electron (CHE) injection promises viability in future EEPROM/flash applications. The new non-planar device exhibits fast program of /spl sim/100 ns, at a maximum internal voltage of 5 V and at low currents of less than 10 /spl mu/A.
Keywords
EPROM; PLD programming; flash memories; hot carriers; integrated memory circuits; EEPROM applications; ballistic channel hot electron injection; ballistic direct CHE injection; flash applications; high speed program; low current operation; low voltage operation; nonplanar device; step split gate cell; Acceleration; Channel hot electron injection; EPROM; FETs; Large scale integration; Low voltage; Scattering; Split gate flash memory cells; Ultra large scale integration; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746520
Filename
746520
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