Analysis of carrier and photon dynamic effects on the modulation behaviour of self assembled quantum dot lasers

Author

Ahmadi, V. ; Yavari, M.H.

Author_Institution

Dept. Of Electr. Eng., Tarbiat Modares Univ., Tehran

Volume

2

fYear

2008

fDate

22-26 June 2008

Firstpage

137

Lastpage

140

Abstract

In this paper, we present a model for numerical analysis of self assembled quantum dot laser (SAQDL), focusing on the frequency response. We show that the details of modulation behaviour of SAQDL are strongly affected by the escape and capture times of carriers. Also, the effect of phonon bottleneck on the degradation of 3 dB frequency of laser is investigated. By considering the effect of quantum dot size fluctuation and temperature in optical gain formula, we simulate the effect of homogeneous and inhomogeneous broadening on the modulation response of laser.

Keywords

electron traps; hole traps; optical modulation; quantum dot lasers; self-assembly; semiconductor quantum dots; SAQDL; carrier capture time; carrier dynamic effect; frequency response; homogeneous broadening; inhomogeneous broadening; modulation response; optical gain formula; optical modulation; phonon bottleneck; photon dynamic effect; quantum dot size fluctuation; self assembled quantum dot laser; Degradation; Fluctuations; Frequency response; Laser modes; Numerical analysis; Numerical models; Optical modulation; Phonons; Quantum dot lasers; Temperature; SAQDL; external quantum efficiency; phonon bottleneck; quantum well; self assembled quantum dot; wetting layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2008. ICTON 2008. 10th Anniversary International Conference on

Conference_Location

Athens

Print_ISBN

978-1-4244-2625-6

Electronic_ISBN

978-1-4244-2626-3

Type

conf

DOI

10.1109/ICTON.2008.4598614

Filename

4598614