Title :
Analysis of carrier and photon dynamic effects on the modulation behaviour of self assembled quantum dot lasers
Author :
Ahmadi, V. ; Yavari, M.H.
Author_Institution :
Dept. Of Electr. Eng., Tarbiat Modares Univ., Tehran
Abstract :
In this paper, we present a model for numerical analysis of self assembled quantum dot laser (SAQDL), focusing on the frequency response. We show that the details of modulation behaviour of SAQDL are strongly affected by the escape and capture times of carriers. Also, the effect of phonon bottleneck on the degradation of 3 dB frequency of laser is investigated. By considering the effect of quantum dot size fluctuation and temperature in optical gain formula, we simulate the effect of homogeneous and inhomogeneous broadening on the modulation response of laser.
Keywords :
electron traps; hole traps; optical modulation; quantum dot lasers; self-assembly; semiconductor quantum dots; SAQDL; carrier capture time; carrier dynamic effect; frequency response; homogeneous broadening; inhomogeneous broadening; modulation response; optical gain formula; optical modulation; phonon bottleneck; photon dynamic effect; quantum dot size fluctuation; self assembled quantum dot laser; Degradation; Fluctuations; Frequency response; Laser modes; Numerical analysis; Numerical models; Optical modulation; Phonons; Quantum dot lasers; Temperature; SAQDL; external quantum efficiency; phonon bottleneck; quantum well; self assembled quantum dot; wetting layer;
Conference_Titel :
Transparent Optical Networks, 2008. ICTON 2008. 10th Anniversary International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-4244-2625-6
Electronic_ISBN :
978-1-4244-2626-3
DOI :
10.1109/ICTON.2008.4598614