• DocumentCode
    2575978
  • Title

    Interfacial Reaction and Joint Reliability of Sn-Ag-Cu/OSP-Cu Pad SMT Solder Joint

  • Author

    Wang, Lei ; Xie, Xiaoqiang ; Lee, Taekoo

  • Author_Institution
    Samsung Semicond. China R&D Co. Ltd., Suzhou
  • fYear
    2006
  • fDate
    26-29 Aug. 2006
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The interfacial reactions between Sn3.0Ag0.5Cu (in wt%) solder and Cu pad during solder ball attach and SMT reflow at 250 degC with various TALs (time above liquidus) were investigated respectively. A Cu 6Sn5 IMC layer formed at the interface of solder and Cu substrate in the first reflow of solder ball attach process, and another Cu6Sn5 IMC layer formed at the other side of solder joint in the second reflow when the device was mounted onto PCB. However the thickness of the two side IMCs were quite different. The IMC growth kinetics during the two times reflows were discussed. The microstructure variation of bulk solder, and the interfacial status seemed to affect the interfacial behavior. Also, the board level drop tests were performed to evaluate the effect of the interfacial reactions on the reliability of solder joints as a function of reflow time. And the interconnect failure mode was characterized based on IMC growth and Kirkendall voids formation
  • Keywords
    copper alloys; reflow soldering; reliability; silver alloys; solders; surface mount technology; tin alloys; voids (solid); 250 C; Cu6Sn5; IMC growth kinetics; IMC layer; Kirkendall voids formation; OSP-Cu pad; PCB; SMT reflow; SMT solder joint; Sn-Ag-Cu; board level drop tests; interconnect failure mode; interfacial reaction; joint reliability; solder ball attach process; time above liquidus; Aging; Copper; Intermetallic; Packaging; Performance evaluation; Scanning electron microscopy; Soldering; Surface finishing; Surface-mount technology; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology, 2006. ICEPT '06. 7th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0619-6
  • Electronic_ISBN
    1-4244-0620-X
  • Type

    conf

  • DOI
    10.1109/ICEPT.2006.359773
  • Filename
    4198894