Temperature variation effect on dynamic characteristics of GaAs avalanche photodiodes

In this paper, for the first time, we investigate the effects of temperature variation on the dynamic characteristics of homojunction GaAs avalanche photodiodes (APDs) over a temperature range of 77 K to 300 K. It is shown that we have higher breakdown voltage and lower frequency bandwidth as the operating temperature increases. We also show that the effect of temperature variation on breakdown voltage reduces in very short multiplication region APDs. In other word for the thin APDs, unlike the thick APDs, the effect of temperature variation on breakdown voltage is negligible.