Title :
Overview of the DARPA non-volatile magnetic memory program
Author :
Patten, Francis W. ; Wolf, Stuart A.
Author_Institution :
Defense Adv. Res. Projects Agency, Arlington, VA, USA
Abstract :
This paper will describe a very new program at DARPA that has as one of its major goals the development of nonvolatile magnetic random access memory that has the potential to be radiation hard, very dense (comparable to DRAM) and very fast (comparable to SRAM). This memory will utilize spin polarized transport through multilayers, either taking advantage of the Giant Magneto-Resistive Effect (GMR), the Spin Valve Effect (SV) or Spin Tunneling (ST)
Keywords :
giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetoresistive devices; radiation hardening (electronics); random-access storage; research initiatives; DARPA; giant magnetoresistive effect; magnetic random access memory; memory density; memory speed; multilayers; nonvolatile magnetic memory; radiation hard; spin polarized transport; spin tunneling; spin valve effect; Giant magnetoresistance; Magnetic anisotropy; Magnetic materials; Magnetic memory; Magnetic multilayers; Magnetic separation; Nonvolatile memory; Perpendicular magnetic anisotropy; Random access memory; Spin valves;
Conference_Titel :
Nonvolatile Memory Technology Conference, 1996., Sixth Biennial IEEE International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-3510-4
DOI :
10.1109/NVMT.1996.534659
