DocumentCode :
2576816
Title :
Silicon cross-slot waveguides insensitive to polarization
Author :
Galan, J.V. ; Sanchis, P. ; Garcia, J. ; Martinez, J.M. ; Blasco, J. ; Martinez, J.M. ; Brimont, A. ; Martí, J.
Author_Institution :
Nanophotonics Technol. Center, Univ. Politec. Valencia, Valencia
fYear :
2009
fDate :
12-14 Jan. 2009
Firstpage :
32
Lastpage :
33
Abstract :
We present a slot waveguide configuration which simultaneously works for TE and TM polarizations. Simulation results are reported to achieve single-mode propagation and insensitivity to polarization. Dispersion is also analyzed by calculating the GVD parameter.
Keywords :
elemental semiconductors; light polarisation; optical dispersion; optical waveguides; refractive index; silicon; GVD parameter estimation; Si; TE polarization; TM polarization; cross-slot waveguide; optical dispersion; refractive index; single-mode propagation; Electromagnetic waveguides; III-V semiconductor materials; Nonlinear optics; Optical refraction; Optical variables control; Optical waveguides; Polarization; Refractive index; Silicon; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE/LEOS Winter Topicals Meeting Series, 2009
Conference_Location :
Innsbruck
Print_ISBN :
978-1-4244-2610-2
Electronic_ISBN :
978-1-4244-2611-9
Type :
conf
DOI :
10.1109/LEOSWT.2009.4771640
Filename :
4771640
Link To Document :
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