DocumentCode :
2576847
Title :
Technology roadmap and beyond
Author :
Nishi, Y.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
fYear :
2003
fDate :
29-31 Oct. 2003
Firstpage :
2
Abstract :
Summary form only given. This paper will cover the technology roadmap based trends of CMOS scaling in the past, today and tomorrow, and discus technical bottle neck and challenges mainly from device physics and technology point of view, followed by looking into several opportunities of nanoelectronic devices such as nanowires, nanotubes from device physics and integration point of view.
Keywords :
CMOS integrated circuits; nanoelectronics; nanotube devices; nanowires; CMOS scaling; device integration; device physics; nanoelectronic devices; nanotubes; nanowires; technology roadmap; CMOS technology; Geometrical optics; Laser theory; Moore´s Law; Nanofabrication; Optical coupling; Product development; Rapid thermal processing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
Type :
conf
DOI :
10.1109/IMNC.2003.1268489
Filename :
1268489
Link To Document :
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