• DocumentCode
    2576872
  • Title

    Impact of mask enhancer on 65-nm node contacts

  • Author

    Misaka, Akio ; Matsuda, Takashi ; Yuito, Takashi ; Matsuo, Takahiro ; Koizumi, Taichi ; Watanabe, Hisashi ; Sasago, Masaru

  • Author_Institution
    Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan
  • fYear
    2003
  • fDate
    29-31 Oct. 2003
  • Firstpage
    6
  • Lastpage
    7
  • Abstract
    We investigated the imaging ability of Mask Enhancer for printing sub-100-nm contact hole patterns. Its performance was drastically improved by adding an attenuated layer with a high transmission factor and phase-shifting assist slots.
  • Keywords
    imaging; nanocontacts; phase shifting masks; photolithography; 100 nm; 65 nm; attenuated layer; contact hole patterns; high transmission factor; imaging ability; mask enhancer; node contacts; phase-shifting assist slots; Contacts; Focusing; High-resolution imaging; Lithography; Mass production; Optical attenuators; Optical imaging; Printing; Resists; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-040-2
  • Type

    conf

  • DOI
    10.1109/IMNC.2003.1268491
  • Filename
    1268491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2576872