DocumentCode :
2576872
Title :
Impact of mask enhancer on 65-nm node contacts
Author :
Misaka, Akio ; Matsuda, Takashi ; Yuito, Takashi ; Matsuo, Takahiro ; Koizumi, Taichi ; Watanabe, Hisashi ; Sasago, Masaru
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan
fYear :
2003
fDate :
29-31 Oct. 2003
Firstpage :
6
Lastpage :
7
Abstract :
We investigated the imaging ability of Mask Enhancer for printing sub-100-nm contact hole patterns. Its performance was drastically improved by adding an attenuated layer with a high transmission factor and phase-shifting assist slots.
Keywords :
imaging; nanocontacts; phase shifting masks; photolithography; 100 nm; 65 nm; attenuated layer; contact hole patterns; high transmission factor; imaging ability; mask enhancer; node contacts; phase-shifting assist slots; Contacts; Focusing; High-resolution imaging; Lithography; Mass production; Optical attenuators; Optical imaging; Printing; Resists; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
Type :
conf
DOI :
10.1109/IMNC.2003.1268491
Filename :
1268491
Link To Document :
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