Title :
Patterning strategy for random contact holes in ultra-low k1 lithography condition
Author :
Mimotogi, Shoji ; Nakamura, Hiroko ; Shiobara, Eishi ; Miyazaki, Maki ; Inoue, Soichi
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp. Semicond. Co., Yokohama, Japan
Abstract :
This paper reports on the startegy for random contact holes patterning in the ultra-low k/sub 1/ lithography condition. The adequate exposure condition for either dense patterns or isolated patterns is examined, considering the multiple exposure technique. Seeking the trend of resist performance from the experimental results, we ascertained the limit of the respective method with simulation.
Keywords :
lithography; resists; dense pattern; exposure condition; isolated pattern; multiple exposure technique; patterning strategy; random contact holes; resists; ultra-low k/sub 1/ lithography condition; Design engineering; Focusing; Lenses; Lighting; Lithography; Manufacturing processes; Optical design; Resists; Semiconductor device manufacture; Transistors;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268493
