• DocumentCode
    2576978
  • Title

    In-situ observation of formation process of self-assembled Si islands on buried SiO2 and their crystallographic structures

  • Author

    Ikeda, Hiroya ; Ishikawa, Yasuhlko ; Homma, Yoshikazu ; Tabe, Michiharu

  • Author_Institution
    Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
  • fYear
    2003
  • fDate
    29-31 Oct. 2003
  • Firstpage
    18
  • Lastpage
    19
  • Abstract
    We observe the agglomeration of SOI and crystallographic structures using in-situ scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM) in order to clarify the initial formation process of the Si islands and the crystallographic structures.
  • Keywords
    elemental semiconductors; island structure; scanning electron microscopy; self-assembly; silicon; silicon-on-insulator; transmission electron microscopy; SEM; SOI; Si-SiO/sub 2/; TEM; buried SiO/sub 2/; cross-sectional transmission electron microscopy; crystallographic structure; scanning electron microscopy; self-assembled Si islands; Annealing; Atomic layer deposition; Chemicals; Crystallization; Crystallography; Electrons; Fabrication; Fingers; Laboratories; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-040-2
  • Type

    conf

  • DOI
    10.1109/IMNC.2003.1268497
  • Filename
    1268497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2576978