Title :
Growth of silicon nanocrystals with high number density for floating dot memory
Author :
Naito, Sei ; Satake, M. ; Kondo, H. ; Sakashita, M. ; Sakai, A. ; Zaima, S. ; Yasuda, Y.
Author_Institution :
Dept. of Crystalline Mater. Sci., Nagoya Univ., Japan
Abstract :
In this paper, we have developed a novel growth of Si nanocrystals by using molecular beam deposition and post-growth oxidation. Formation of Si dots with a high number density (about 1/spl times/10/sup 12/ cm/sup -2/) and a small grain size (less than 10 nm in diameter) has been demonstrated. Memory operations of devices using these Si dots were also examined.
Keywords :
atomic force microscopy; elemental semiconductors; grain size; molecular beam epitaxial growth; oxidation; semiconductor epitaxial layers; semiconductor growth; semiconductor storage; silicon; transmission electron microscopy; Si dots; Si-SiO/sub 2/; floating dot memory; grain size; memory operations; molecular beam deposition; post-growth oxidation; silicon nanocrystals growth; Atomic force microscopy; Grain size; Nanocrystals; Nonvolatile memory; Oxidation; Silicon; Surface morphology; Temperature; US Department of Transportation; Voltage;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268498
