DocumentCode
2577116
Title
CD shrink process with cure and bake
Author
Sasaki, S. ; Watanabe, M. ; Taguchi, T.
Author_Institution
Silicon Solution Co., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
34
Lastpage
35
Abstract
In this paper, CD shrink process with cure and bake were investigated. This process contains two steps; the first is a cure process and the second is a bake process. We used KrF resist and fabricated 70-160 nm gate patterns through mask. Resist pattern were cured by irradiation of an electron beam. These two processes have been reported in this article.
Keywords
electron beam effects; masks; resists; scanning electron microscopy; 70 to 160 nm; CD shrink process; KrF resist; SEM; bake process; cure process; electron beam irradiation; mask; scanning electron microscopy; Costs; Electron beams; Etching; Fabrication; Lithography; Ovens; Resists; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268505
Filename
1268505
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