Low temperature, atmospheric pressure plasma processing of materials

Author

Hicks, R.F. ; Xiawan Yang ; Mooravej, M. ; Nowling, G. ; Babayan, S.

Author_Institution

Chem. Eng. Dept., California Univ., Los Angeles, CA, USA

fYear

2003

fDate

29-31 Oct. 2003

Firstpage

40

Abstract

Summary form only given. In this paper, a low temperature, atmospheric pressure plasma source has been examined for the isotropic etching of photoresist, glass and metal film. In addition, the system has been configured for remote plasma enhanced chemical vapour deposition of silicon dioxide, silicon nitride and amorphous hydrogenated silicon.

Keywords

amorphous semiconductors; elemental semiconductors; glass; metallic thin films; photoresists; plasma CVD; plasma materials processing; semiconductor growth; semiconductor thin films; silicon; silicon compounds; sputter etching; Si; Si/sub 3/N/sub 4/; SiO/sub 2/; amorphous hydrogenated silicon; atmospheric pressure plasma processing; glass; isotropic etching; low temperature plasma processing; metal film; photoresist; plasma enhanced chemical vapour deposition; silicon dioxide; silicon nitride; Atmospheric-pressure plasmas; Glass; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma sources; Plasma temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-040-2

Type

conf

DOI

10.1109/IMNC.2003.1268508

Filename

1268508