Title :
Microcrystalline silicon thin film formation using pulse modulated microwave plasma
Author :
Homma, K. ; Yamamoto, M. ; Hori, M. ; Goto, T.
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Japan
Abstract :
In this paper, we have investigated the growth of /spl mu/c-Si:H thin films using the pulse modulated microwave plasma (MWP) with the SiF/sub 4/ addition. The crystallinity was investigated by Raman spectroscopy. The crystalline orientation was evaluated by X-ray diffraction (XRD). The Hall mobility was also evaluated.
Keywords :
Hall mobility; Raman spectra; X-ray diffraction; amorphous semiconductors; elemental semiconductors; hydrogen; noncrystalline structure; plasma deposition; semiconductor growth; semiconductor thin films; silicon; /spl mu/c-Si:H thin film growth; Hall mobility; Raman spectra; Si:H; X-ray diffraction; XRD; crystalline orientation; crystallinity; microcrystalline silicon thin film; pulse modulated microwave plasma deposition; Crystallization; Plasma x-ray sources; Pulse modulation; Raman scattering; Semiconductor thin films; Silicon; Spectroscopy; Transistors; X-ray diffraction; X-ray scattering;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268512
