Title :
Residence time effect on the properties of low-k a-C:F films by PECVD
Author :
Tokimitsu, T. ; Watanable, H. ; Shinga, J. ; Okamoto, T. ; Haneji, N. ; Shimogaki, Y.
Author_Institution :
Sch. of Eng., Tokyo Univ., Japan
Abstract :
Amorphous fluorinated carbon (a-C:F) films for low-k applications in ULSIs were prepared by plasma enhanced chemical vapor deposition (PECVD) using C/sub 4/F/sub 8/ as a source precursor. In this work, the electric characteristic of the low-k a-C:F film was measured, and the correlation with each polarization of dielectric constant and film structures was examined. The film structure depends on the residence time of source gas in PECVD. It was suggested that the electronic polarization has a negative correlation in growth rate of films, the ionic polarization has a positive correlation in F/C ratio of films, and the orientational polarization had a positive correlation in C-CF bond in C1s spectrum of XPS.
Keywords :
X-ray photoelectron spectra; amorphous state; carbon; dielectric polarisation; dielectric thin films; fluorine; noncrystalline structure; permittivity; plasma CVD; C-CF bond; C:F; PECVD; ULSI; XPS; amorphous fluorinated carbon films; dielectric constant; dielectric polarization; electrical properties; electronic polarization; film structures; ionic polarization; low-k a-C:F films; plasma enhanced chemical vapor deposition; residence time; Amorphous materials; Chemical vapor deposition; Electric variables; Plasma applications; Plasma chemistry; Plasma measurements; Plasma properties; Plasma sources; Polarization; Ultra large scale integration;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268513
