DocumentCode
2577468
Title
Valence band engineering and polarization switching in quantum dots grown in inverted pyramids
Author
Troncale, Valentina ; Karlsson, Karl Fredrik ; Pelucchi, Emanuele ; Rudra, Alok ; Dwir, Benjamin ; Kapon, Eli
Author_Institution
Lab. of Phys. of Nanostruct. (LPN), Ecole Polytech. Fed. de Lausanne (EPFL), Ecublens
fYear
2009
fDate
12-14 Jan. 2009
Firstpage
102
Lastpage
103
Abstract
Control on the degree of valence band mixing is experimentally achieved in the particular GaAs/AlGaAs quantum Dot-in-Dot (DiD) structure. The effect is reflected by the tunable polarization of the emitted photons.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; light polarisation; optical tuning; semiconductor quantum dots; valence bands; GaAs-AlGaAs; inverted pyramids; polarization switching; quantum dot-in-dot structure; quantum dots; valence band engineering; valence band mixing; Gallium arsenide; Geometry; Laboratories; MOCVD; Optical polarization; Physics; Potential well; Quantum dots; Stationary state; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE/LEOS Winter Topicals Meeting Series, 2009
Conference_Location
Innsbruck
Print_ISBN
978-1-4244-2610-2
Electronic_ISBN
978-1-4244-2611-9
Type
conf
DOI
10.1109/LEOSWT.2009.4771677
Filename
4771677
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