Title :
Dynamics of 2D photonic crystal lasers
Author :
Raineri, F. ; Yacomotti, A. ; Hostein, R. ; Braive, R. ; Beveratos, A. ; Sagnes, I. ; Raj, R.
Author_Institution :
Lab. de Photonique et de Nanostruct., CNRS, Marcoussis
Abstract :
Band-edge photonic crystal lasers were fabricated and their temporal characteristics were minutely analyzed using a high resolution up-conversion system. The InGaAs/InP 2D photonic crystal laser operates at room temperature at 1.55 mum showing possibility of modulating faster than 25 GHz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; optical fabrication; optical modulation; photonic crystals; semiconductor lasers; 2D photonic crystal laser; InGaAs-InP; band-edge photonic crystal lasers; high resolution up-conversion system; laser dynamics; laser fabrication; laser modulation; temperature 293 K to 298 K; temporal characteristics; wavelength 1.55 mum; Indium gallium arsenide; Indium phosphide; Lattices; Optical devices; Optical refraction; Photonic crystals; Q factor; Silicon; Slabs; Temperature;
Conference_Titel :
IEEE/LEOS Winter Topicals Meeting Series, 2009
Conference_Location :
Innsbruck
Print_ISBN :
978-1-4244-2610-2
Electronic_ISBN :
978-1-4244-2611-9
DOI :
10.1109/LEOSWT.2009.4771683
