Title :
The extraction of development parameters by using cross-sectional critical shape error method
Author :
Hyoung-Hee Kim ; Jun-Tack Park ; Jung-Wook Choi ; Insin An ; Hye-Keun Oh
Author_Institution :
Dept. of Phys., Hanyang Univ., Seoul, South Korea
Abstract :
Summary form only given. In this paper, we study the SEM images of several chemically amplified resists (CAR) and the simulation results were produced by cross-sectional critical shape error (CCSE) method.
Keywords :
error analysis; resists; scanning electron microscopy; semiconductor device models; SEM; chemically amplified resists; cross-sectional critical shape error method; extraction; Chemicals; Computational modeling; Data mining; Distributed computing; Lithography; Predictive models; Semiconductor devices;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268530
