DocumentCode :
2577750
Title :
Comparison Study from Sputtering, Sol-Gel, and ALD Processes Developing Embedded Thin Film Capacitors
Author :
Ahn, Jinyong ; Lee, Joseph Y. ; Kim, Joonsung ; Yoo, JeGwang ; Ryu, Changsup
Author_Institution :
Samsung Electro-Mech. Co. Ltd., Suwon
fYear :
2006
fDate :
26-29 Aug. 2006
Firstpage :
1
Lastpage :
5
Abstract :
Three methods for fabricating thin film capacitors are investigated using sputtering, sol-gel, and atomic layer deposition (ALD) techniques for advanced packaging applications for embedded capacitors. In particular, the microstructures and the electrical properties of ceramic oxide films Au/Ti/Al2O3 for ALD are being studied while ferroelectric thin films Au/Ti/BaTiO3 for sol-gel and Cu/Ba1-XSrXTiO3 for sputtering are being discussed in detail. The upper Au/Ti electrode layer is deposited by dc magnetron sputtering on top of Al2O 3 (ALD process) and on BT layer to complete the Au/Ti/BaTiO 3/Ni/Cu/FR4/Cu (sol-gel process) structure respectively whereas Cu is deposited by sputtering on top of the BST layer to complete the Cu/Ba1-XSrXTiO3/Cu/SiO2/Si (sputtering process). After a careful comparison is done, ALD for the Al 2O3 thin film seems to show the most promising process for its low temperature at 150degC and for its electrical properties like a capacitance of 0.88nF/mm2 with less then plusmn2% tolerances, a dissipation factor of less than 0.018, and a low leakage current less than 0.1muA/cm2 at 4 V
Keywords :
alumina; atomic layer deposition; barium compounds; copper; gold; nickel; silicon compounds; sol-gel processing; sputter deposition; thin film capacitors; titanium; 150 C; 4 V; ALD process; Au-Ti-Al2O3; Au-Ti-BaTiO3; Au/Ti electrode layer; Cu-BaSrTiO3-Cu-SiO2-Si; atomic layer deposition techniques; ceramic oxide films; dc magnetron sputtering; electrical properties; embedded thin film capacitors; ferroelectric thin films; sol-gel process; sputtering process; Atomic layer deposition; Capacitors; Ceramics; Ferroelectric films; Ferroelectric materials; Gold; Microstructure; Packaging; Sputtering; Strontium; ALD; BT; FR4; PCB; PWB; sol-gel; sputtering; thin film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology, 2006. ICEPT '06. 7th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0619-6
Electronic_ISBN :
1-4244-0620-X
Type :
conf
DOI :
10.1109/ICEPT.2006.359875
Filename :
4198996
Link To Document :
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