Effect of Bi2O3 doping and CIP on ionic conductivity of scandia ceria stabilized zirconia

Author

Nesova, E. ; Barbashov, V. ; Jebel, A. ; Komysa, Y.

Author_Institution

Donetsk Phys. Tech. Inst., Donetsk, Ukraine

fYear

2014

fDate

26-30 May 2014

Firstpage

95

Lastpage

95

Abstract

Effect of Bi₂O₃ doping and cold isostatic pressing (CIP ) on the ionic conductivity of the ceramics ZrO₂ + 10 mol .% Sc₂O₃ + 1 mol. % CeO₂ was studied. It was established that sintering the Bi₂O₃ doped ceramic specimens uses the lower temperatures after cold isostatic pressing (value of the sintering temperature was less than 400°C). CIP and sintering regimes (0.6 GPa ; 1100°C at 70 h) of specimens yielded high conductive and dense ceramics (0.028 S cm^-1 at 800°C).

Keywords

bismuth compounds; ceramics; cerium compounds; doping; ionic conductivity; pressing; scandium compounds; sintering; zirconium compounds; ZrO₂-Sc₂O₃-CeO₂:Bi₂O₃; ceramic; cold isostatic pressing; conductive ceramic; doped ceramic; doping; ionic conductivity; scandia ceria stabilized zirconia; sintering; Ceramics; Powders; Bi2O3; cold isostatic pressing; conductivity; doping; scandia ceria stabilize zirconia;

fLanguage

English

Publisher

ieee

Conference_Titel

Oxide Materials for Electronic Engineering (OMEE), 2014 IEEE International Conference on

Conference_Location

Lviv

Print_ISBN

978-1-4799-5960-0

Type

conf

DOI

10.1109/OMEE.2014.6912356

Filename

6912356