DocumentCode :
257778
Title :
Electrical properties of silicon oxide nanocomposites of porous silicon
Author :
Olenych, I. ; Monastyrskii, L. ; Sokolovskii, B.
Author_Institution :
Ivan Franko Nat. Univ. of Lviv, Lviv, Ukraine
fYear :
2014
fDate :
26-30 May 2014
Firstpage :
96
Lastpage :
97
Abstract :
The impedance spectra of silicon oxide nanocomposites of porous silicon is investigated in 25 Hz - 1 MHz frequency range. The different dispersion of electrical capacity in different frequency bands and complex relaxation processes that affect the electric transport properties of nanocomposites were revealed. Based on the analysis of spectra of thermal stimulated depolarization it was shown that oxidation of the surface of porous silicon nanocrystals gives rise to changing the density of states in different energy ranges.
Keywords :
electrochemical impedance spectroscopy; elemental semiconductors; nanocomposites; oxidation; porous semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; thermally stimulated currents; Si-SiO2; complex relaxation processes; density-of-states; electric transport properties; electrical capacity dispersion; electrical properties; frequency 25 Hz to 1 MHz; frequency bands; impedance spectra; oxidation; porous silicon; porous silicon nanocrystals; silicon oxide nanocomposites; thermal stimulated depolarization; Luminescence; Silicon; charge relaxation; impedance; porous silicon; thermally stimulated depolarization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2014 IEEE International Conference on
Conference_Location :
Lviv
Print_ISBN :
978-1-4799-5960-0
Type :
conf
DOI :
10.1109/OMEE.2014.6912357
Filename :
6912357
Link To Document :
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