Title :
The surface adhesion parameter: a measure for wafer bondability
Author :
Gui, C. ; Elwenspoek, M. ; Tas, N. ; Gardeniers, J.G.E.
Author_Institution :
MESA Res. Inst., Twente Univ., Enschede, Netherlands
Abstract :
A theory is presented which describes the initial direct wafer bonding process. The effect of surface microroughness on the bondability is studied on the basis of the theory of contact and adhesion of elastic solids. An effective bonding energy, the maximum of which is the specific surface energy of adhesion, is proposed to describe the real binding energy of the bonding interface including the influence of the wafer surface microroughness. Both the effective bonding energy and the real area of contact between rough surfaces depend on a dimensionless surface adhesion parameter, /spl theta/. Using the adhesion parameter as a measure, three kinds of wafer contact interfaces can be identified with respect to their bondability; viz. the non-bonding regime (/spl theta/>/spl ap/12), the bonding regime (/spl theta/\n\n\t\t
Keywords :
adhesion; mechanical contact; micromachining; rough surfaces; semiconductor process modelling; surface energy; surface topography; wafer bonding; DMT-Maugis theory; adherence regime; bonding regime; contact mechanics theory; continuous model; dimensionless parameter; effective bonding energy; elastic solids contact; initial direct wafer bonding process; micromachining; nonbonding regime; real binding energy; specific surface energy of adhesion; statistical surface roughness model; surface adhesion parameter; surface microroughness; wafer bondability; wafer contact interfaces; Adhesives; Atmospheric modeling; Rough surfaces; Semiconductor device modeling; Solids; Surface roughness; Surface topography; Surface waves; Temperature; Wafer bonding;
Conference_Titel :
Micro Electro Mechanical Systems, 1999. MEMS '99. Twelfth IEEE International Conference on
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-5194-0
DOI :
10.1109/MEMSYS.1999.746839
