• DocumentCode
    2578179
  • Title

    A model of staggered organic thin-film transistors with contact resistance

  • Author

    Rim, Tai-Uk ; Sohn, Chang-Woo ; Jeong, Yoon-Ha

  • Author_Institution
    Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
  • fYear
    2009
  • fDate
    2-5 June 2009
  • Firstpage
    158
  • Lastpage
    161
  • Abstract
    In this paper, we propose a current equation of organic thin-film transistors including a consideration of the contact resistance. The variable range hopping (VRH) model and the current crowding model are chosen for the charge transport of organic semiconductors and an effect of the contact resistance, respectively. The characteristic curves of our proposed model highly show consensus with the measured data. The contact resistance has more weight for the linear regime than for the saturation regime because charge carriers are crowded in the contact region between an electrode and the channel layer, so the carrier injection is decelerated due to the bottle-neck effect.
  • Keywords
    contact resistance; thin film transistors; carrier injection; channel layer; charge carriers; contact resistance; organic thin-film transistors; variable range hopping model; Contact resistance; Electrical resistance measurement; Electrodes; Equations; Organic semiconductors; Organic thin film transistors; Pentacene; Proximity effect; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
  • Conference_Location
    Traverse City, MI
  • Print_ISBN
    978-1-4244-4695-7
  • Electronic_ISBN
    978-1-4244-4696-4
  • Type

    conf

  • DOI
    10.1109/NMDC.2009.5167524
  • Filename
    5167524