DocumentCode
2578179
Title
A model of staggered organic thin-film transistors with contact resistance
Author
Rim, Tai-Uk ; Sohn, Chang-Woo ; Jeong, Yoon-Ha
Author_Institution
Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
fYear
2009
fDate
2-5 June 2009
Firstpage
158
Lastpage
161
Abstract
In this paper, we propose a current equation of organic thin-film transistors including a consideration of the contact resistance. The variable range hopping (VRH) model and the current crowding model are chosen for the charge transport of organic semiconductors and an effect of the contact resistance, respectively. The characteristic curves of our proposed model highly show consensus with the measured data. The contact resistance has more weight for the linear regime than for the saturation regime because charge carriers are crowded in the contact region between an electrode and the channel layer, so the carrier injection is decelerated due to the bottle-neck effect.
Keywords
contact resistance; thin film transistors; carrier injection; channel layer; charge carriers; contact resistance; organic thin-film transistors; variable range hopping model; Contact resistance; Electrical resistance measurement; Electrodes; Equations; Organic semiconductors; Organic thin film transistors; Pentacene; Proximity effect; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location
Traverse City, MI
Print_ISBN
978-1-4244-4695-7
Electronic_ISBN
978-1-4244-4696-4
Type
conf
DOI
10.1109/NMDC.2009.5167524
Filename
5167524
Link To Document