DocumentCode :
2578221
Title :
Effects of high pressure hydrogen anneal process on performance and reliability in HfO2/SiO2 dielectric with contact etch stop layer stressor
Author :
Song, Seung Hyun ; Park, Min Sang ; Lee, Kyong Taek ; Choi, Hyun Sik ; Choi, Gil Bok ; Baek, Rock Hyun ; Sagong, Hyun Chul ; Jung, Sung Woo ; Kang, Chang Yong ; Wu, Bob ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
fYear :
2009
fDate :
2-5 June 2009
Firstpage :
225
Lastpage :
228
Abstract :
Effects of high pressure hydrogen annealing (HPHA) process on a nitride contact etch stop layer (CESL) MOSFETs is studied. High interface quality by HPHA leads to improved on-current (Ion) and transconductance (Gm) while reliability degradation is acceptable.
Keywords :
MOSFET; annealing; hafnium compounds; silicon compounds; HfO2-SiO2; contact etch stop layer stressor; high pressure hydrogen annealing; reliability degradation; transconductance; Annealing; Etching; Hafnium oxide; High-K gate dielectrics; Hydrogen; MOS devices; MOSFETs; Solids; Tin; USA Councils; Hydrogen; MOS devices; strain engineering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
Type :
conf
DOI :
10.1109/NMDC.2009.5167526
Filename :
5167526
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2578221
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